![]() ![]() We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7GHz) and responsivity (9.5A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. ![]()
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